MRF101AN

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2024121312314021

MRF101AN

MRF101AN RF MOSFET Transistors

Manufacture: NXP Semiconductors

RF Mosfet 50 V 100 mA 1.8MHz ~ 250MHz 21.1dB 115W TO-220-3

INQUIRY

Id – Continuous Drain Current:	8.8 A
Vds – Drain-Source Breakdown Voltage:	133 V
Operating Frequency:	1.8 MHz to 250 MHz
Gain:	21.1 dB
Output Power:	115 W
Minimum Operating Temperature:	– 40 C
Maximum Operating Temperature:	+ 150 C
Mounting Style:	Through Hole
Package / Case:	TO-220-3
Forward Transconductance – Min:	7.1 S
Number of Channels:	1 Channel
Pd – Power Dissipation:	182 W
Vgs – Gate-Source Voltage:	+ 10 V
Vgs th – Gate-Source Threshold Voltage:	2.7 V

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